High-pressure high-temperature structural studies of binary semiconductors
The last decade has seen a tremendous improvement in high-pressure diffraction techniques. Among other things, this has led to a completely new understanding of the structural systematics of the group IV, III-V and II-VI semiconductors. Many phases have been shown to have more complex, lower-symmetr...
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University of Edinburgh
2000
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.663186 |