MOSFET strain sensor for microcantilevers
Microcantilever structure was used to design and fabricate strain sensors. P-channel MOSFETs were designed and fabricated for strain sensors as hole mobility under uniaxial stress has higher mobility enhancement than that of electron mobility under either uniaxial stress or biaxial stress. For MOSFE...
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Queen's University Belfast
2014
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.675436 |