Experimental investigation of carrier mobility degradation in metal oxide semiconductor field effect transistors of high permittivity gate dielectrics
Scaling of electronic devices is driven, from the consumption side, by the need for compact electrical products, increase in device speed and from the production side, by lowering of production cost. However, aggressive scaling gives rise, among others, to high gate tunnelling currents in contempora...
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De Montfort University
2006
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.702058 |