Engineered high-k oxides
The evolution of integrated circuit technology over the five decades resulted in scaling down the minimum feature size of a transistor from 10 μm to ~14 nm. The high-k dielectrics were identified as potential candidates to replace SiO2 from 2007 due to the large leakage current observed when scaling...
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University of Liverpool
2016
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.706884 |