Investigation of deep level defects in advanced semiconductor materials and devices
This thesis reports an investigation of deep level defects in narrow bandgap semiconductors, namely GaAs and GaAsN, and wide-gap GaN materials and devices that have potential applications in photovoltaics and betavoltaic microbatteries. Indeed, for such applications it is of paramount importance to...
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University of Nottingham
2017
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.719428 |