Hafnium oxide based gate stacks on germanium and silicon
Up until 2007 the heart of the metal-oxide-semiconductor-field-effect-transistor (MOSFET) in computer processors was based on the Si-SiO2-poly Si system. This changed when Intel announced the fabrication of the high-k metal gate MOSFET. This was required because the SiO2 layer had become too thin so...
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University of Liverpool
2017
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.722065 |