Total ionizing dose response of high-k dielectrics on MOS devices
As advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) technology continues to minimize the gate oxide thickness, the exponential increase in gate leakage current poses a major challenge for silicon dioxide (SiO2) based devices. In order to reduce the gate leakage current while mai...
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University of Liverpool
2017
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.722107 |