Novel GaN-based Vertical Field Effect Transistors for power switching
Novel GaN-based vertical structures are investigated to exploit the high voltage and high power capability of GaN. Two distinctive structures – vertical high electron mobility transistor (VHEMT) and vertical junction field effect transistor (VJFET) are studied. The trade-off between on-state resista...
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University of Sheffield
2017
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.727313 |