Atomic structure of thin films and heterostructure of Bi2Te3 and Bi2Se3 topological insulators

The atomic structure of transition metals doped three dimensional (3D) topological insulators (TIs) and the bonding nature of Bi2Te3 with FeSe layers and Ge(111) substrate were studied. Motivation behind transition metal doping of 3D TIs is driven by achieving long range ferromagnetism of Bi2Se3 and...

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Bibliographic Details
Main Author: Ghasemi, Arsham
Other Authors: Lazarov, Vlado
Published: University of York 2017
Subjects:
530
Online Access:https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.729542