Atomic layer deposition of alumina and zinc oxide for optoelectronic devices
Atomic layer deposition (ALD) uses surface reactions of gaseous precursors to grow thin films of materials. Exceptional uniformity and thickness control is possible due to the separation of the different precursors, allowing each to undergo reactions with substrate surface groups until, on chemisorp...
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Imperial College London
2016
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.739607 |