Growth and characterisation of strained InGaAsN and InAsN type 1 multi quantum wells for mid infrared light sources based on InP
In this work, novel quantum well structures were grown by molecular beam epitaxy (MBE). Samples have been designed in order to allow access to light sources from InP based type I interband devices, for the technologically important mid-infrared (Mid-IR) (2-5 um) spectral range. Investigations of dil...
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Lancaster University
2014
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.742533 |