The characterisation of performance limiting defects in 4H-SiC devices using density functional theory
This thesis is focused on the atomistic modelling of defects both within silicon carbide (SiC) and at the interface between SiC and silicon dioxide (SiO2). These defects are discussed and compared to available experimental data to allow for the identification of performance limiting defects in the c...
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University College London (University of London)
2017
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.746711 |