Computational modelling of defects and charge trapping in amorphous and crystalline metal oxides
Thin films of metal oxides, like Al2O3 and LaAlO3, play a crucial role in emerging nanoelectronic devices. Using density functional theory (DFT) and other computational methods, the properties of defects and intrinsic polaron trapping have been calculated in LaAlO3 and amorphous Al2O3. The spectrosc...
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University College London (University of London)
2018
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.747400 |