GaInSb quantum wells grown on metamorphic buffer layers for mid-infrared lasers
This work studies the use of Ga0.12-0.i6In0.88-0.84Sb quantum wells grown by molecular beam epitaxy (MBE) on a highly mismatched substrate for use in light emitting diodes (LEDs) and lasers emitting in the 3-4 /μm spectral range. Quantum well samples were grown at Lancaster which had abrupt interf...
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Lancaster University
2014
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.747981 |