Metallic nanotransistors.
Efforts to downscale transistor dimensions to satisfy the demands for ultra high density integrated circuits have been met so far with optical lithography techniques. However, they are now facing their fundamental limits including optical diffraction and the limits associated with UV exposure source...
| Main Author: | |
|---|---|
| Language: | en |
| Published: |
University of Canterbury. Electrical and Computer Engineering
2009
|
| Online Access: | http://hdl.handle.net/10092/2604 |