Photoluminescence of High Quality Epitaxial p-type InN
Indium nitride (InN) is a group III-V semiconductor that is part of the Al,Ga:N family. It is an infrared bandgap semiconductor with great potential for use in photovoltaic applications. Being an intrinsically n-type material, p-type doping is naturally one of the ongoing hot topics in InN research,...
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| Language: | en |
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University of Canterbury. Physics and Astronomy
2013
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| Online Access: | http://hdl.handle.net/10092/8101 |