Thin-film Bulk Acoustic Resonators on Integrated Circuits for Physical Sensing Applications

• Main Author: Johnston, Matthew Leigh
• Language: English
• Published: 2012
• Subjects: Electrical engineering
• Online Access: https://doi.org/10.7916/D8HT2MDJ

Merging chemical and biomolecular sensors with silicon integrated circuits has the potential to push complex electronics into a low-cost, portable platform, greatly simplifying system- level instrumentation and extending the reach and functionality of point of use technologies. One such class of sensor, the thin-film bulk acoustic resonator (FBAR), has a micron-scale size and low gigahertz frequency range that is ideally matched with modern complementary metal-oxide-semiconductor (CMOS) technologies. An FBAR sensor can enable label-free detection of analytes in real time, and CMOS integration can overcome the measurement complexity and equipment cost normally required for detection with acoustic resonators. This thesis describes a body of work conducted to integrate an array of FBAR sensors with an active CMOS substrate. A monolithic fabrication method is developed, which allows for FBAR devices to be built directly on the top surface of the CMOS chip through post-processing. A custom substrate is designed and fabricated in 0.18 µm CMOS to support oscillation and frequency measurement for each sensor site in a 6×4 array. The fabrication of 0.8-1.5 GHz FBAR devices is validated for both off-chip and on-chip devices, and the integrated system is characterized for sensitivity and limit of detection. On-chip, parallel measurement of multiple sensors in real time is demonstrated for a quantitative vapor sensing application, and the limit of detection is below 50 ppm. This sensor platform could be used for a broad scope of label-free detection applications in chemistry, biology, and medicine, and it demonstrates potential for enabling a low-cost, point of use instrument.