Growth and characterization of InAs quantum dots prepared by low-pressure metal-organic vapor phase epitaxy using N2 as carrier gas.

Wang Hui. === Thesis (M.Phil.)--Chinese University of Hong Kong, 2004. === Includes bibliographical references (leaves 78-84). === Abstracts in English and Chinese. === ABSTRACT (ENGLISH) --- p.i === ABSTRACT (CHINESE) --- p.iii === ACKNOWLEDGEMENTS --- p.iv === CONTENTS --- p.v === Chapter CHAP...

Full description

Bibliographic Details
Other Authors: Wang, Hui
Format: Others
Language:English
Chinese
Published: 2004
Subjects:
Online Access:http://library.cuhk.edu.hk/record=b5892036
http://repository.lib.cuhk.edu.hk/en/item/cuhk-324918