Optical properties and microstructures of β-FeSi₂ in silicon.
A metal-oxide-silicon (MOS) tunneling diode is utilized to embed beta-FeSi 2 precipitates and give strong 1.5 tam electroluminescence at 80 K. And this simple MOS structure with beta-FeSi2 was fabricated by Fe ion implantation and rapid thermal oxidation (RTO) at 900°C, which is fully compat...
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| Format: | Others |
| Language: | English Chinese |
| Published: |
2008
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| Online Access: | http://library.cuhk.edu.hk/record=b6074667 http://repository.lib.cuhk.edu.hk/en/item/cuhk-344300 |