Cylindrical Field Effect Transistor: A Full Volume Inversion Device
The increasing demand for high performance as well as low standby power devices has been the main reason for the aggressive scaling of conventional CMOS transistors. Current devices are at the 32nm technology node. However, due to physical limitations as well as increase in short-channel effects, le...
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| Language: | en |
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2011
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| Online Access: | Fahad, H. M. (2010). Cylindrical Field Effect Transistor: A Full Volume Inversion Device. KAUST Research Repository. https://doi.org/10.25781/KAUST-43Z38 http://hdl.handle.net/10754/133952 |