III-nitrides, 2D transition metal dichalcogenides, and their heterojunctions
Group III-nitride materials have attracted great attention for applications in high efficiency electronic and optoelectronics devices such as high electron mobility transistors, light emitting diodes, and laser diodes. On the other hand, group VI transition metal dichalcogenides (TMDs) in the form o...
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| Language: | en |
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2017
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| Online Access: | http://hdl.handle.net/10754/623463 |