Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides
III-nitride direct bandgap semiconductors have attracted significant research interest due to their outstanding potential for modern optoelectronic and electronic applications. However, the high cost of III-nitride devices, along with low performance due to dislocation defects, remains an obstacle t...
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| Language: | en |
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2018
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| Online Access: | Mumthaz Muhammed, M. (2018). Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides. KAUST Research Repository. https://doi.org/10.25781/KAUST-G645H http://hdl.handle.net/10754/627382 |