Epitaxial growth of 4H-SiC and characterization of deep levels for bipolar power devices

Kyoto University (京都大学) === 0048 === 新制・課程博士 === 博士(工学) === 甲第13015号 === 工博第2757号 === 新制||工||1401(附属図書館) === UT51-2007-H288 === 京都大学大学院工学研究科電子工学専攻 === (主査)教授木本恒暢, 教授野田進, 教授藤田静雄 === 学位規則第4条第1項該当...

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Main Author:	Danno, Katsunori
Other Authors:	木本, 恒暢
Format:	Others
Language:	English
Published:	京都大学 (Kyoto University) 2011
Subjects:	500
Online Access:	http://hdl.handle.net/2433/136192

id	ndltd-kyoto-u.ac.jp-oai-repository.kulib.kyoto-u.ac.jp-2433-136192
record_format	oai_dc
spelling	ndltd-kyoto-u.ac.jp-oai-repository.kulib.kyoto-u.ac.jp-2433-1361922017-10-06T03:47:02Z Epitaxial growth of 4H-SiC and characterization of deep levels for bipolar power devices バイポーラ型パワーデバイス実現に向けた4H-SiCのエピタキシャル成長と深い準位の評価バイポーラガタパワーデバイスジツゲンニムケタ 4H-SiC ノエピタキシャルセイチョウトフカイジュンイノヒョウカ Danno, Katsunori 木本, 恒暢野田, 進藤田, 静雄旦野, 克典ダンノ, カツノリ 500 Kyoto University (京都大学) 0048 新制・課程博士博士(工学) 甲第13015号工博第2757号新制\|\|工\|\|1401(附属図書館) UT51-2007-H288 京都大学大学院工学研究科電子工学専攻 (主査)教授木本恒暢, 教授野田進, 教授藤田静雄学位規則第4条第1項該当 2011-02-14T01:24:46Z 2011-02-14T01:24:46Z 2007-03-23 2007-03-23 DAM Thesis or Dissertation http://hdl.handle.net/2433/136192 000008618950 eng application/pdf 京都大学 (Kyoto University) 京都大学
collection	NDLTD
language	English
format	Others
sources	NDLTD
topic	500
spellingShingle	500 Danno, Katsunori Epitaxial growth of 4H-SiC and characterization of deep levels for bipolar power devices
description	Kyoto University (京都大学) === 0048 === 新制・課程博士 === 博士(工学) === 甲第13015号 === 工博第2757号 === 新制\|\|工\|\|1401(附属図書館) === UT51-2007-H288 === 京都大学大学院工学研究科電子工学専攻 === (主査)教授木本恒暢, 教授野田進, 教授藤田静雄 === 学位規則第4条第1項該当
author2	木本, 恒暢
author_facet	木本, 恒暢 Danno, Katsunori
author	Danno, Katsunori
author_sort	Danno, Katsunori
title	Epitaxial growth of 4H-SiC and characterization of deep levels for bipolar power devices
title_short	Epitaxial growth of 4H-SiC and characterization of deep levels for bipolar power devices
title_full	Epitaxial growth of 4H-SiC and characterization of deep levels for bipolar power devices
title_fullStr	Epitaxial growth of 4H-SiC and characterization of deep levels for bipolar power devices
title_full_unstemmed	Epitaxial growth of 4H-SiC and characterization of deep levels for bipolar power devices
title_sort	epitaxial growth of 4h-sic and characterization of deep levels for bipolar power devices
publisher	京都大学 (Kyoto University)
publishDate	2011
url	http://hdl.handle.net/2433/136192
work_keys_str_mv	AT dannokatsunori epitaxialgrowthof4hsicandcharacterizationofdeeplevelsforbipolarpowerdevices AT dannokatsunori baipōraxíngpawādebaisushíxiànnixiàngketa4hsicnoepitakisharuchéngzhǎngtoshēnizhǔnwèinopíngsì AT dannokatsunori baipōragatapawādebaisujitsugennimuketa4hsicnoepitakisharuseichoutofukaijuninohyouka
_version_	1718546967485743104

Epitaxial growth of 4H-SiC and characterization of deep levels for bipolar power devices

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