EPITAXIAL GROWTH OF SiC BY CHEMICAL VAPOR DEPOSITION AND APPLICATION TO ELECTRONIC DEVICES

Kyoto University (京都大学) === 0048 === 新制・課程博士 === 工学博士 === 甲第3995号 === 工博第1005号 === 新制||工||716(附属図書館) === UT51-63-J229 === 京都大学大学院工学研究科電気工学第二専攻 === (主査)教授松波弘之, 教授佐々木昭夫, 教授藤田茂夫 === 学位規則第5条第1項該当...

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Bibliographic Details
Main Author:	Shibahara, Kentaro
Other Authors:	松波, 弘之
Format:	Others
Language:	English
Published:	Kyoto University 2012
Subjects:	500
Online Access:	http://hdl.handle.net/2433/162216

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spelling	ndltd-kyoto-u.ac.jp-oai-repository.kulib.kyoto-u.ac.jp-2433-1622162017-09-09T03:48:32Z EPITAXIAL GROWTH OF SiC BY CHEMICAL VAPOR DEPOSITION AND APPLICATION TO ELECTRONIC DEVICES CVD法によるSiCのエピタキシャル成長と電子デバイスへの応用 Shibahara, Kentaro 松波, 弘之佐々木, 昭夫藤田, 茂夫芝原, 健太郎シバハラ, ケンタロウ 500 Kyoto University (京都大学) 0048 新制・課程博士工学博士甲第3995号工博第1005号新制\|\|工\|\|716(附属図書館) UT51-63-J229 京都大学大学院工学研究科電気工学第二専攻 (主査)教授松波弘之, 教授佐々木昭夫, 教授藤田茂夫学位規則第5条第1項該当 2012-11-26T23:58:24Z 2012-11-26T23:58:24Z 1988-03-23 1988-03-23 DFAM Thesis or Dissertation http://hdl.handle.net/2433/162216 000000200193 10.14989/doctor.k3995 eng application/pdf Kyoto University 京都大学
collection	NDLTD
language	English
format	Others
sources	NDLTD
topic	500
spellingShingle	500 Shibahara, Kentaro EPITAXIAL GROWTH OF SiC BY CHEMICAL VAPOR DEPOSITION AND APPLICATION TO ELECTRONIC DEVICES
description	Kyoto University (京都大学) === 0048 === 新制・課程博士 === 工学博士 === 甲第3995号 === 工博第1005号 === 新制\|\|工\|\|716(附属図書館) === UT51-63-J229 === 京都大学大学院工学研究科電気工学第二専攻 === (主査)教授松波弘之, 教授佐々木昭夫, 教授藤田茂夫 === 学位規則第5条第1項該当
author2	松波, 弘之
author_facet	松波, 弘之 Shibahara, Kentaro
author	Shibahara, Kentaro
author_sort	Shibahara, Kentaro
title	EPITAXIAL GROWTH OF SiC BY CHEMICAL VAPOR DEPOSITION AND APPLICATION TO ELECTRONIC DEVICES
title_short	EPITAXIAL GROWTH OF SiC BY CHEMICAL VAPOR DEPOSITION AND APPLICATION TO ELECTRONIC DEVICES
title_full	EPITAXIAL GROWTH OF SiC BY CHEMICAL VAPOR DEPOSITION AND APPLICATION TO ELECTRONIC DEVICES
title_fullStr	EPITAXIAL GROWTH OF SiC BY CHEMICAL VAPOR DEPOSITION AND APPLICATION TO ELECTRONIC DEVICES
title_full_unstemmed	EPITAXIAL GROWTH OF SiC BY CHEMICAL VAPOR DEPOSITION AND APPLICATION TO ELECTRONIC DEVICES
title_sort	epitaxial growth of sic by chemical vapor deposition and application to electronic devices
publisher	Kyoto University
publishDate	2012
url	http://hdl.handle.net/2433/162216
work_keys_str_mv	AT shibaharakentaro epitaxialgrowthofsicbychemicalvapordepositionandapplicationtoelectronicdevices AT shibaharakentaro cvdfǎniyorusicnoepitakisharuchéngzhǎngtodiànzidebaisuhenoyīngyòng
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EPITAXIAL GROWTH OF SiC BY CHEMICAL VAPOR DEPOSITION AND APPLICATION TO ELECTRONIC DEVICES

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