Scanning probe force microscopy of III-V semiconductor structures

Scanning probe force microscopy of III-V semiconductor structures

In this dissertation, cross-sectional potential imaging of GaAs-based homoepitaxial, heteroepitaxial and quantum well structures, all grown by atmospheric pressure Metal-organic Vapor Phase Epitaxy (MOVPE) is investigated. Kelvin probe force microscopy (KPFM), using amplitude modulation (AM) and fre...

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Bibliographic Details
Main Author: Kameni Boumenou, Christian
Format: Others
Language:English
Published: Nelson Mandela University 2017
Subjects:
Scanning probe microscopy > South Africa
Semiconductors > Optical properties
Online Access:http://hdl.handle.net/10948/13992

Internet

http://hdl.handle.net/10948/13992

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