GaN microwave power FET nonlinear modelling techniques

GaN microwave power FET nonlinear modelling techniques

Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2010. === ENGLISH ABSTRACT: The main focus of this thesis is to document the formulation, extraction and validation of nonlinear models for the on-wafer gallium nitride (GaN) high-electron mobility (HEMT) devices...

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Bibliographic Details
Main Author: Brooks, Clive Raymond
Other Authors: Van Niekerk, C.
Format: Others
Language:en
Published: Stellenbosch : University of Stellenbosch 2010
Subjects:
Dissertations > Electronic engineering
Theses > Electronic engineering
Gallium nitride
Interuniversity Microelectronics Centre (IMEC)
Semiconductor technology
High-electron mobility (HEMT) devices
Online Access:http://hdl.handle.net/10019.1/4306

Internet

http://hdl.handle.net/10019.1/4306

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