A dependency of quantum efficiency of silicon CMOS n+pp+ LEDs on current density
Abstract—A dependency of quantum efficiency of nn+pp+ silicon complementary metal–oxide–semiconductor integrated lightemitting devices on the current density through the active device areas is demonstrated. It was observed that an increase in current density from 1 6 10+2 to 2 2 10+4 A cm 2 through...
| Main Authors: | , , |
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| Format: | Others |
| Language: | en |
| Published: |
IEEE Photonics Technology Letters
2005
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| Subjects: | |
| Online Access: | http://encore.tut.ac.za/iii/cpro/DigitalItemViewPage.external?sp=1001057 |