III-V OMVPE growth and characterisation of graded AlₓGaₓ₋₁As-GaAs layers and heterointerfaces for the development of GRIN-SCH lasers and Gunn diodes
Bibliography: pages 125-131. === AlGaAs-GaAs graded index single confinement heterostructure single quantum well (GRIN-SCH SQW) lasers and both 35 GHz and 94 GHz Gunn diodes have been satisfactorily grown by organometallic vapour phase epitaxy (OMVPE). This work is based on the material development...
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| Format: | Dissertation |
| Language: | English |
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University of Cape Town
2016
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| Online Access: | http://hdl.handle.net/11427/21501 |