Microstructure and residual stress in hydrogenated amorphous silicon (a-Si:H) layers
Includes bibliographical references. === Hydrogenated amorphous silicon (a-Si:H) is known to be highly disordered. The disorder introduces a high amount of defects in the network, such as bond length and angle deviation, non-coordinated bonds or voids. In this work the microstructural characterizati...
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| Format: | Dissertation |
| Language: | English |
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University of Cape Town
2014
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| Online Access: | http://hdl.handle.net/11427/6548 |