Diffusion of ion implanted iodine in 6H-SiC
The diffusion of iodine implanted 6H-SiC has been investigated using Rutherford backscattering Spectrometry (RBS). SiC is used as the main barrier in the modern high temperature gas cooled reactors. An understanding of the transport behaviour of iodine in 6H-SiC will shed some light into SiC’s effec...
| Main Author: | |
|---|---|
| Other Authors: | |
| Published: |
2013
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/2263/25921 Kuhudzai, RJ 2010, Diffusion of ion implanted iodine in 6H-SiC, MSc dissertation, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/25921 > http://upetd.up.ac.za/thesis/available/etd-06282011-112122/ |