Electrical characterisation of Schottky barrier diodes fabricated on GaAs by electron beam metallisation

Electrical characterisation of Schottky barrier diodes fabricated on GaAs by electron beam metallisation

The electrically active defects introduced in GaAs by electron beam deposition (EB) of Ta were characterised. The effect of electron beam deposition on the electrical properties of GaAs was evaluated by current-voltage (I-V), capacitance¬voltage (C- V) and deep level transient spectroscopy (DL TS)....

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Bibliographic Details
Main Author: Sithole, Enoch Mpho
Other Authors: Prof F D Auret
Published: 2013
Subjects:
Semiconductors electronic properties
Diodes schottky barrier defects
UCTD
Online Access:http://hdl.handle.net/2263/29753
Sithole, EM 2001, Electrical characterization of Schottky barrier diodes fabricated on GaAs by electron beam metallisation, MSc dissertation, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/29753 >
http://upetd.up.ac.za/thesis/available/etd-11242005-140906/

Internet

http://hdl.handle.net/2263/29753
Sithole, EM 2001, Electrical characterization of Schottky barrier diodes fabricated on GaAs by electron beam metallisation, MSc dissertation, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/29753 >
http://upetd.up.ac.za/thesis/available/etd-11242005-140906/

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