Electrical characterization of silicide and process induced defects in silicon
Metal deposition on Si has effects that may be detrimental to device operation such as diffusion, Fermi level pinning and silicide formation. Silicide formation is dependent on type of metal and temperature at which particular silicide is formed. Different defects have been observed during metallisa...
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| Language: | en |
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University of Pretoria
2016
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| Online Access: | http://hdl.handle.net/2263/53484 Danga, T 2016, Electrical characterization of silicide and process induced defects in silicon, MSc Dissertation, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/53484> |