Electrical characterization of process- and radiation-induced defects in 4H-SiC

Electrical characterization of process- and radiation-induced defects in 4H-SiC

Devices for operation in aerospace, manufacturing industries, defence and radiation-harsh environments need to be manufactured from materials that are resistant to the frequent damage caused by irradiation and high-temperature environments. Silicon carbide (SiC) is a wide-bandgap semiconductor mater...

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Bibliographic Details
Main Author: Omotoso, Ezekiel
Other Authors: Meyer, W.E. (Walter Ernst)
Language:en
Published: University of Pretoria 2016
Subjects:
UCTD
Online Access:http://hdl.handle.net/2263/53547
Omotoso, E 2016, Electrical characterization of process- and radiation-induced defects in 4H-SiC, PhD Thesis, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/53547>

Internet

http://hdl.handle.net/2263/53547
Omotoso, E 2016, Electrical characterization of process- and radiation-induced defects in 4H-SiC, PhD Thesis, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/53547>

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