Hybrid functional study of point defects in germanium

Hybrid functional study of point defects in germanium

Germanium exhibits electron and hole mobilities that are higher than silicon. These unique properties make Ge a promising material for the development of metal-oxide semiconductor eld e ect transistors (MOSFETs). Point defects in semiconductors in uence the electronic structure as well as the t...

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Bibliographic Details
Main Author: Igumbor, Emmanuel
Other Authors: Meyer, W.E. (Walter Ernst)
Language:en
Published: University of Pretoria 2017
Subjects:
UCTD
Online Access:http://hdl.handle.net/2263/60813
Igumbor, E 2017, Hybrid functional study of point defects in germanium, PhD Thesis, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/60813>

Internet

http://hdl.handle.net/2263/60813
Igumbor, E 2017, Hybrid functional study of point defects in germanium, PhD Thesis, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/60813>

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