Correlation of argon-copper sputtering mechanisms with experimental data using a digital computer simulation technique

Approved for public release; distribution is unllimited === The sputtering process has been investigated by simulating the sputtering of single-crystal copper with 1=7 keV argon. A digital computer was used to build the crystal, bombard it, and move crystal atoms. Four mechanisms were observed whi...

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Main Author:	Effron, Herbert M.
Other Authors:	Harrison, Don E., Jr.
Language:	en_US
Published:	Monterey, California. U.S. Naval Postgraduate School 2012
Online Access:	http://hdl.handle.net/10945/11873

id	ndltd-nps.edu-oai-calhoun.nps.edu-10945-11873
record_format	oai_dc
spelling	ndltd-nps.edu-oai-calhoun.nps.edu-10945-118732015-05-06T03:58:26Z Correlation of argon-copper sputtering mechanisms with experimental data using a digital computer simulation technique Effron, Herbert M. Harrison, Don E., Jr. Department of Physics Approved for public release; distribution is unllimited The sputtering process has been investigated by simulating the sputtering of single-crystal copper with 1=7 keV argon. A digital computer was used to build the crystal, bombard it, and move crystal atoms. Four mechanisms were observed which cause surface atoms to sputter. An atom is sputtered when (1) it is squeezed out of the surface, (2) it is scooped out when another atom strikes its inner hemisphere, (3) it is ejected when an atom passes behind it, and (4) it is knocked out by a second layer atom which is moving outward. Nearly all sputtered atoms were surface atoms. Second and third layer atoms were sputtered only for energies greater than 5 keV. They were sputtered by mechanisms similar to the surface atom mechanisms. "Sillsbee chains" were observed to be directed into the crystal, and momentum focusing was observed to cause spsuttering only when it occurred in close packed, surface rows. Outward directed chains were not observed. Sputtering deposit patterns, sputtering ratios, and sputtered atom energy distributions were obtained for (100), (110), and (111) surfaces. All data compared favorably with experimental data. 2012-08-29T23:29:56Z 2012-08-29T23:29:56Z 1967-06 Thesis http://hdl.handle.net/10945/11873 en_US This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. As such, it is in the public domain, and under the provisions of Title 17, United States Code, Section 105, it may not be copyrighted. Monterey, California. U.S. Naval Postgraduate School
collection	NDLTD
language	en_US
sources	NDLTD
description	Approved for public release; distribution is unllimited === The sputtering process has been investigated by simulating the sputtering of single-crystal copper with 1=7 keV argon. A digital computer was used to build the crystal, bombard it, and move crystal atoms. Four mechanisms were observed which cause surface atoms to sputter. An atom is sputtered when (1) it is squeezed out of the surface, (2) it is scooped out when another atom strikes its inner hemisphere, (3) it is ejected when an atom passes behind it, and (4) it is knocked out by a second layer atom which is moving outward. Nearly all sputtered atoms were surface atoms. Second and third layer atoms were sputtered only for energies greater than 5 keV. They were sputtered by mechanisms similar to the surface atom mechanisms. "Sillsbee chains" were observed to be directed into the crystal, and momentum focusing was observed to cause spsuttering only when it occurred in close packed, surface rows. Outward directed chains were not observed. Sputtering deposit patterns, sputtering ratios, and sputtered atom energy distributions were obtained for (100), (110), and (111) surfaces. All data compared favorably with experimental data.
author2	Harrison, Don E., Jr.
author_facet	Harrison, Don E., Jr. Effron, Herbert M.
author	Effron, Herbert M.
spellingShingle	Effron, Herbert M. Correlation of argon-copper sputtering mechanisms with experimental data using a digital computer simulation technique
author_sort	Effron, Herbert M.
title	Correlation of argon-copper sputtering mechanisms with experimental data using a digital computer simulation technique
title_short	Correlation of argon-copper sputtering mechanisms with experimental data using a digital computer simulation technique
title_full	Correlation of argon-copper sputtering mechanisms with experimental data using a digital computer simulation technique
title_fullStr	Correlation of argon-copper sputtering mechanisms with experimental data using a digital computer simulation technique
title_full_unstemmed	Correlation of argon-copper sputtering mechanisms with experimental data using a digital computer simulation technique
title_sort	correlation of argon-copper sputtering mechanisms with experimental data using a digital computer simulation technique
publisher	Monterey, California. U.S. Naval Postgraduate School
publishDate	2012
url	http://hdl.handle.net/10945/11873
work_keys_str_mv	AT effronherbertm correlationofargoncoppersputteringmechanismswithexperimentaldatausingadigitalcomputersimulationtechnique
_version_	1716803157097447424

Correlation of argon-copper sputtering mechanisms with experimental data using a digital computer simulation technique

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