Thermal modeling of GaN HEMTs on sapphire and diamond
Wide bandgap semiconductors have entered into Naval radar use and will eventually replace vacuum tube and conventional solid-state amplifiers for all modern military radar and communications applications. Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are on the leading edge of wid...
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Monterey, California. Naval Postgraduate School
2012
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| Online Access: | http://hdl.handle.net/10945/1810 |