Transport imaging for the study of quantum scattering phenomena in next generation semiconductor devices
Approved for public release; distribution is unlimited === The minority carrier diffusion length is a critical parameter in the development of next generation Heterostructure Bipolar Transistors (HBT) and highly efficient solar cells. A novel technique has been developed utilizing direct imaging of...
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Monterey, California. Naval Postgraduate School
2012
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| Online Access: | http://hdl.handle.net/10945/1851 |