Development of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on diamond substrates
Silicon based semiconductor devices are rapidly approaching the theoretical limit of operation and are becoming unsuitable for future military requirements. The scope of semiconductor devices has been expanded by wide bandgap devices such as gallium nitride (GaN) to include the possibility for high...
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Monterey California. Naval Postgraduate School
2012
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| Online Access: | http://hdl.handle.net/10945/2820 |