Studium defektů v gradovaných tenkých vrstvách SiGe/Si pomocí rozptylu rtg.záření
The goal of presented work is a study of defects in graded Si1xGex/Si thin layers. Misfit dislocations are dominant type of defects in this kind of layers. Diffuse scattering of radiation, which is caused by the presence of defects, was measured with high-resolution diffractometer. Misfit dislocatio...
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| Format: | Dissertation |
| Language: | Czech |
| Published: |
2010
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| Online Access: | http://www.nusl.cz/ntk/nusl-298683 |