Three-dimensional effects and surface breakdown addressing efficiency and reliability problems in avalanche bipolar junction transistors
Abstract Although avalanche switching has been known since the 1950s, a trustworthy one-dimensional physical interpretation of the practically interesting high-current mode ("secondary breakdown") in a Si avalanche transistor has appeared only within the last decade and thanks to numerica...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
Oulun yliopisto
2013
|
| Subjects: | |
| Online Access: | http://urn.fi/urn:isbn:9789526200859 http://nbn-resolving.de/urn:isbn:9789526200859 |