Design and verification of bonded GaN power amplifier for the 5G
In this thesis a bonded Gallium nitride (GaN) power amplifier (PA) is designed using 3D modeling tool to design layout for the gate and drain matching elements for the GaN PA including bondwires. 1D circuit simulator is used to simulate the PA operation with 3D simulated matching blocks and large si...
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| Format: | Dissertation |
| Language: | English |
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University of Oulu
2017
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| Online Access: | http://urn.fi/URN:NBN:fi:oulu-201710132996 http://nbn-resolving.de/urn:nbn:fi:oulu-201710132996 |