A Study of Oxygen Precipitation in Heavily Doped Silicon
Gettering of impurities with oxygen precipitates is widely used during the fabrication of semiconductors to improve the performance and yield of the devices. Since the effectiveness of the gettering process is largely dependent on the initial interstitial oxygen concentration, accurate measurements...
| Main Author: | |
|---|---|
| Format: | Others |
| Published: |
PDXScholar
1989
|
| Subjects: | |
| Online Access: | https://pdxscholar.library.pdx.edu/open_access_etds/1218 https://pdxscholar.library.pdx.edu/cgi/viewcontent.cgi?article=2217&context=open_access_etds |