A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices

A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices

This manuscript describes the design, development, and implementation of a linear high efficiency power amplifier. The symmetrical Doherty power amplifier utilizes TriQuint's 2nd Generation Gallium Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistor (HEMT) devices (T1G60010...

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Bibliographic Details
Main Author: Baker, Bryant
Format: Others
Published: PDXScholar 2014
Subjects:
Power amplifiers > Design and construction
Gallium nitride
Silicon carbide
Microwave amplifiers
Electrical and Computer Engineering
Online Access:https://pdxscholar.library.pdx.edu/open_access_etds/1781
https://pdxscholar.library.pdx.edu/cgi/viewcontent.cgi?article=2781&context=open_access_etds

Internet

https://pdxscholar.library.pdx.edu/open_access_etds/1781
https://pdxscholar.library.pdx.edu/cgi/viewcontent.cgi?article=2781&context=open_access_etds

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