Scaling of the Silicon-on-Insulator Si and Si1-xGex p-MOSFETs

Scaling of the Silicon-on-Insulator Si and Si1-xGex p-MOSFETs

Two-dimensional numerical simulation was used to study the scaling properties of SOI p-MOSFETs. Based on the design criteria for the threshold voltage and DIBL, a set of design curves for different designs was developed. Data for subthreshold slope, SCE and threshold voltage sensitivity to silicon f...

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Bibliographic Details
Main Author: Peršun, Marijan
Format: Others
Published: PDXScholar 1995
Subjects:
Metal oxide semiconductor field-effect transistors > Design and construction
Silicon > Electronic properties > Computer simulation
Metal oxide semiconductors > Computer simulation
Electrical and Computer Engineering
Online Access:https://pdxscholar.library.pdx.edu/open_access_etds/4934
https://pdxscholar.library.pdx.edu/cgi/viewcontent.cgi?article=6006&context=open_access_etds

Internet

https://pdxscholar.library.pdx.edu/open_access_etds/4934
https://pdxscholar.library.pdx.edu/cgi/viewcontent.cgi?article=6006&context=open_access_etds

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