MODELING QUANTUM AND COULOMB EFFECTS IN NANOSCALE ENHANCEMENT-MODE TRI-GATE III-V MOSFETs
The limited benefits of strain engineering in extremely scaled silicon devices and a lack of demonstrated gain in performance at the product level in nanowires, nanotubes, graphene, and other exotic channel materials give good reason to continue semiconductor device scaling using high-transport III-...
| Main Author: | |
|---|---|
| Format: | Others |
| Published: |
OpenSIUC
2015
|
| Online Access: | https://opensiuc.lib.siu.edu/dissertations/1005 https://opensiuc.lib.siu.edu/cgi/viewcontent.cgi?article=2009&context=dissertations |