Modeling Random Dopant Fluctuation Effects in Nanoscale Tri-gate FETs
The tri-gate FET has been hailed as the biggest breakthrough in transistor technology in the last 20 years. The increase in device performance (faster switching, less delay, improved short channel effects, etc.) coupled with the reduction in device size, would allow for huge gains in the electronic...
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| Format: | Others |
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OpenSIUC
2011
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| Online Access: | https://opensiuc.lib.siu.edu/theses/759 https://opensiuc.lib.siu.edu/cgi/viewcontent.cgi?article=1766&context=theses |