In-situ temperature and thickness characterization for silicon wafers undergoing thermal annealing

In-situ temperature and thickness characterization for silicon wafers undergoing thermal annealing

Nano scale processing of IC chips has become the prime production technique as the microelectronic industry aims towards scaling down product dimensions while increasing accuracy and performance. Accurate control of temperature and a good monitoring mechanism for thickness of the deposition layers...

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Bibliographic Details
Main Author: Vedantham, Vikram
Other Authors: Suh, Chii-Der S.
Format: Others
Language:en_US
Published: Texas A&M University 2004
Subjects:
Ultrasonics
Wave Propagation
Silicon Wafers
RTP
Thermal Processing
wafer
Thermal Annealing
Lamb waves
Signal Processing
Gabor Wavelet Transform
Wavelet Transform
Group Velocity
Semiconductor
Online Access:http://hdl.handle.net/1969.1/1181

Internet

http://hdl.handle.net/1969.1/1181

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