Design, Simulation and Modeling of Insulated Gate Bipolar Transistor
The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions of IGBT circuits based on device simulation and combinat...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en |
| Published: |
2013
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1969.1/151277 |