Design, Simulation and Modeling of Insulated Gate Bipolar Transistor
The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions of IGBT circuits based on device simulation and combinat...
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Format: | Others |
Language: | en |
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2013
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Online Access: | http://hdl.handle.net/1969.1/151277 |