Amorphous silicon thin film transistor as nonvolatile device.
n-channel and p-channel amorphous-silicon thin-film transistors (a-Si:H TFTs) with copper electrodes prepared by a novel plasma etching process have been fabricated and studied. Their characteristics are similar to those of TFTs with molybdenum electrodes. The reliability was examined by extended hi...
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| Format: | Others |
| Language: | en_US |
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Texas A&M University
2008
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| Online Access: | http://hdl.handle.net/1969.1/86004 |