Investigation of ternary ΑlΙnΝ and quaternary ΑlGaΙnΝ alloys for high electron mobility transistors by transmission electron microscopy
Les semi-conducteurs III-V à base d’azote et leurs alliages possèdent des propriétés remarquables et sont largement étudiés depuis les années 90. En comparaison à d'autres semi-conducteurs III-V, Les alliages de type ; AlGaN, InGaN et AlInN, ont leurs bandes interdites, directes, du lointain ul...
Main Author: | Ben ammar, Hichem |
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Other Authors: | Normandie |
Language: | en |
Published: |
2017
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Subjects: | |
Online Access: | http://www.theses.fr/2017NORMC241/document |
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