Investigation of ternary ΑlΙnΝ and quaternary ΑlGaΙnΝ alloys for high electron mobility transistors by transmission electron microscopy

Investigation of ternary ΑlΙnΝ and quaternary ΑlGaΙnΝ alloys for high electron mobility transistors by transmission electron microscopy

Les semi-conducteurs III-V à base d’azote et leurs alliages possèdent des propriétés remarquables et sont largement étudiés depuis les années 90. En comparaison à d'autres semi-conducteurs III-V, Les alliages de type ; AlGaN, InGaN et AlInN, ont leurs bandes interdites, directes, du lointain ul...

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Bibliographic Details
Main Author:	Ben ammar, Hichem
Other Authors:	Normandie
Language:	en
Published:	2017
Subjects:	Séparation de phase Phase separation Pinholes Hillocks AlInN AlGaInN TEM AFM APT HEMT
Online Access:	http://www.theses.fr/2017NORMC241/document

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